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SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 ? SEPTEMBER 1995 7
BSS84
PARTMARKING DETAIL ?
SP
ABSOLUTE MAXIMUM RATINGS.
D
G
S
PARAMETER
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage Peak
Power Dissipation at T amb =25°C
Operating and Storage Temperature Range
SYMBOL
V DS
I D
I DM
V GS
P TOT
t j :t stg
VALUE
-50
-130
-520
± 20
360
-55 to +150
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C).
PARAMETER SYMBOL MIN. TYP. MAX.
UNIT
CONDITIONS.
Drain-Source
Breakdown Voltage
BV DSS
-50
V
V GS =0V, I D =0.25mA
Gate-Source
Threashold Voltage
V GS(th)
-0.8
-1.5
-2.0
V
V DS =V GS , I D =-1mA
Zero gate Voltage
Drain Current
I DSS
-1
-2
-15
-60
μ A
μ A
T =25 °C
T =125 °C
V =-50V, V
=0V(2 )
-100
T j =25 ° C
V =-25V, V
=0V
Gate-Source Leakage
Current
Drain Source On-State
Resistance (1)
I GSS
R DS(on)
-1
6
-10
10
nA
?
V GS = ± 20V
V DS =0V
V GS =-5V
I D =-100mA
Forward
Transconductance (1)
(2)
Input Capacitance (2)
Output Capacitance
Reverse Transfer
Capacitance (2)
Turn-On Time t on
Turn-Off Time t off
g fs
C iss
C oss
C rss
td(on)
t r
t d(off)
0.05
0.07
40
15
6
10
10
18
S
pF
ns
V DS =-25V
I D =-100mA
V GS =0V
V DS =-25V
f=1MHz
V DD =-30V
I D =-0.27A
V GS =-10V
R GS =50 ?
t f
25
* (1) Measured under pulsed conditions. Pulse width = 300 μ s. Duty cycle 2%
(2) Sample test.
3 - 69
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